東北大学多元研 高桑研究室 本文へジャンプ

研究業績(1993年)


オリジナル論文


  • Y. Takakuwa, M. Nihei, and N. Miyamoto
    Outdiffusion and subsequent desorption of volatile SiO molecules during annealing of thick SiO2 films in vacuum
    Japanese Journal of Applied Physics, 32, (1993), L480-L483.
  • I. Ochiai, T. Ogawa, Y. Takakuwa, and K. Mochiji
    Photon-stimulated desorption from chemically treated Si surfaces
    Surface Science, 287/288, (1993), 175-177.
  • F. Shimoshikiryo, Y. Takakuwa, N. Oyama, and N. Miyamoto
    Gold wire sealing method of stainless-steel/aluminum-alloy joint for thermal isolation at liquid-nitrogen temperature
    Journal of Vacuum Science & Technology, A11, (1993), 2874-2875.



国際会議抄録


  • Y. Takakuwa, M.K. Mazumder, and N. Miyamoto
    Growth defect observation with pyramidal hillock and reduction by photoexcited hydrogen
    Proceedings of 183rd Meeting of The Electrochemical Society, co-sponsored by The Electrochemical Society of Japan with the cooperation of The Japan Society of Applied Physics, May 1993, Honolulu, USA.
  • H. Sakamoto, Y. Takakuwa, Y. Enta, T. Hori, N. Miyamoto, and H. Kato
    Surface reaction kinetics in synchrotron radiation assisted chemical vapor deposition of Si with SiH2Cl2
    Proceedings of the 12th International Symposium on Chemical Vapor Deposition 1993, edited by K.F. Jensen and G.W. Cullen, (May 1993, Honolulu, USA) 27-33.


国内会議抄録




研究報告書など




学会発表

国内学会


招待
  • 高桑雄二
    放射光励起半導体プロセスと表面計測
    平成5年度東北大学科学計測研究所春季研究発表会, 東北大学, 仙台 (1993.6).
  • 高桑雄二
    シリコン酸化プロセスの統合反応モデルの実験的検証
    化学工学会CVD特別研究会ミニシンポジウム「表面反応はどこまで理解できるか」, 東京大学, 東京 (1993.11).

一般
  • 堀仁一,高桑雄二,遠田義晴,坂本仁志,宮本信雄
    放射光励起オージェ電子分光法によるSi表面光反応の解析
    第22回放射工学研究会, 東北大学, 仙台 (1993.2).
  • 坂本仁志,高桑雄二,遠田義晴,堀仁一,加藤博雄,宮本信雄
    SiH2Cl2吸着Si(100)表面での熱脱離反応
    第40回応用物理学関係連合講演会, 東京 (1993.3).
  • 坂本仁志,高桑雄二,遠田義晴,堀仁一,加藤博雄,宮本信雄
    SiH2Cl2吸着Si(100)表面からの水素・塩素の光刺激脱離
    第40回応用物理学関係連合講演会, 東京 (1993.3).
  • 高桑雄二,堀仁一,遠田義晴,坂本仁志,加藤博雄,宮本信雄
    放射光励起オージェ電子分光法によるSi2H6、 SiH2Cl2吸着Si(100)表面の解析
    第6回日本放射光学会, 東京大学, 東京 (1993.5).
  • 遠田義晴,飯田仁,高桑雄二,加藤博雄,宮本信雄
    SR-UPSによる(NH4)2Sx処理GaAs表面の硫黄脱理離と表面状態変化:脱離方法依存
    第6回日本放射光学会, 東京大学, 東京 (1993.5).
  • 坂本仁志,高桑雄二,堀江哲弘,堀仁一,宮本信雄
    Si(100)表面からの塩素熱脱離によるエッチングの表面反応モデル
    第54回応用物理学会学術講演会, 札幌 (1993.9).

国際会議


招待
  • Y. Takakuwa
    In situ UPS measurements during GSMBE on Si(100) with Si2H6 and SiH2Cl2
    A Workshop on Two-Dimensional Semiconductor Research using Synchrotron Radiation: 2D(SR)2, Tsukuba, Japan (1993.11).

一般
  • Y. Takakuwa, M.K. Mazumder, and N. Miyamoto
    . Growth defect observation with pyramidal hillock and reduction by photoexcited hydrogen
    183rd Meeting of The Electrochemical Society, co-sponsored by The Electrochemical Society of Japan with the cooperation of The Japan Society of Applied Physics, Honolulu, USA (1993.5).
  • H. Sakamoto, Y. Takakuwa, Y. Enta, T. Hori, N. Miyamoto, and H. Kato
    Surface reaction kinetics in synchrotron radiation assisted chemical vapor deposition of Si with SiH2Cl2
    183rd Meeting of The Electrochemical Society, co-sponsored by The Electrochemical Society of Japan with the cooperation of The Japan Society of Applied Physics, Honolulu, USA (1993.5).
  • H. Sakamoto, Y. Takakuwa, T. Hori, T. Horie, and N. Miyamoto
    First-order isothermal desorption kinetics of chlorine on SiH2Cl2-adsorbed Si(100) surface
    The Second International Symposium on Atomically Controlled Surfaces and Interfaces, Joensuu, Finland (1993.6).
  • Y. Takakuwa, T. Yamaguchi, and N. Miyamoto
    Si dangling bonds on Si(100) surface during gas-source molecular beam epitaxy with Si2H6
    4th International Conference on Chemical Beam Epitaxy and Related Growth Techniques, Nara, Japan (1993.7).
  • T. Horie, Y. Takakuwa, T. Yamaguchi, and N. Miyamoto
    Hydrogen desorption rate and surface hydrogen coverage during isothermal annealing for Si2H6-adsorbed Si(100) surfaces
    4th International Conference on Chemical Beam Epitaxy and Related Growth Techniques, Nara, Japan (1993.7).
  • T. Horie, Y. Takakuwa, and N. Miyamoto
    Two-dimensional growth and decomposition of initial thermal SiO2 layer on Si(100)
    1993 International Conference on Solid State Devices and Materials, Makuhari, Japan (1993.8).
  • Y. Takakuwa, M. Nihei, T. Horie, and N. Miyamoto
    . Thermal oxidation mechanism based on formation and diffusion of volatile SiO molecules
    R.A. Weeks International Symposium on Science and Technology of SiO2 Related Materials, Honolulu, USA (1993.11).