東北大学多元研　高桑研究室 本文へジャンプ
PRESENTATIONS

(International Conferences)

  1. "Photoemission measurements of EuB6"
    Y. Takakuwa, S. Suzuki and T. Sagawa
    International Conference on X-ray and XUV Spectroscopy, August 29 - September 1, 1978, Sendai Citizen’s Hall, Sendai, Japan
  2. "Photoelectron spectroscopy of LnBa2Cu3O7-δ"
    T. Takahashi, F. Maeda, H. Arai, H. Katayama-Yoshida, Y. Okabe, T. Suzuki, Y. Takakuwa, S. Hosoya, A. Fujimori, T. Miyahara, T. Koide, T. Shidara, M. Sato, S. Shamoto and M. Onoda
    YAMADA Conference XVIII on Superconductivity in Highly Correlated Fermion System, July 1987, Sendai, Japan
  3. "Growth kinetics in silane gas-source molecular beam epitaxy"
    M. Suemitsu, F. Hirose, Y. Takakuwa and N. Miyamoto
    The Second International Conference on Chemical Beam Epitaxy and Related Growth Techniques, August 1989, Houston, USA
  4. (Invited) "Silicon orientation effects on SiO2/Si interface structure"
    M. Niwano, Y. Takakuwa and N. Miyamoto
    Symposium on Advanced Science and Technology of Silicon Materials, November 1991, Honolulu, USA
  5. "The influence of Si surface structure on photon-stimulated ion desorption"
    K. Mochiji, I. Ochiai, T. Ogawa, Y. Takakuwa, K. Lee and D.H. Hanson
    Micro Process '92, July 1992, Kawasaki, Japan
  6. "Photo-stimulated desorption from chemically treated Si surface"
    I. Ochiai, T. Ogawa, Y. Takakuwa and K. Mochiji
    The 12th International Vacuum Congress and 8th International Conference on Solid Surfaces, October 1992, Hague, The Netherlands
  7. "Growth defect observation with pyramidal hillock and reduction by photoexcited hydrogen"
    Y. Takakuwa, M.K. Mazumder and N. Miyamoto
    183rd Meeting of The Electrochemical Society, co-sponsored by The Electrochemical Society of Japan with the cooperation of The Japan Society of Applied Physics, May 1993, Honolulu, USA
  8. "Surface reaction kinetics in synchrotron radiation assisted chemical vapor deposition of Si with SiH2Cl2"
    H. Sakamoto, Y. Takakuwa, Y. Enta, T. Hori, N. Miyamoto and H. Kato
    183rd Meeting of The Electrochemical Society, co-sponsored by The Electrochemical Society of Japan with the cooperation of The Japan Society of Applied Physics, May 1993, Honolulu, USA
  9. "First-order isothermal desorption kinetics of chlorine on SiH2Cl2-adsorbed Si(100) surface"
    H. Sakamoto, Y. Takakuwa, T. Hori, T. Horie and N. Miyamoto
    The Second International Symposium on Atomically Controlled Surfaces and Interfaces, June 1993, Joensuu, Finland
  10. "Si dangling bonds on Si(100) surface during gas-source molecular beam epitaxy with Si2H6"
    Y. Takakuwa, T. Yamaguchi and N. Miyamoto
    4th International Conference on Chemical Beam Epitaxy and Related Growth Techniques, July 1993, Nara, Japan
  11. "Hydrogen desorption rate and surface hydrogen coverage during isothermal annealing for Si2H6-adsorbed Si(100) surfaces"
    T. Horie, Y. Takakuwa, T. Yamaguchi and N. Miyamoto
    4th International Conference on Chemical Beam Epitaxy and Related Growth Techniques, July 1993, Nara, Japan
  12. "Two-dimensional growth and decomposition of initial thermal SiO2 layer on Si(100)"
    T. Horie, Y. Takakuwa and N. Miyamoto
    1993 International Conference on Solid State Devices and Materials, August 1993, Makuhari, Japan
  13. "Thermal oxidation mechanism based on formation and diffusion of volatile SiO molecules"
    Y. Takakuwa, M. Nihei, T. Horie and N. Miyamoto
    R.A. Weeks International Symposium on Science and Technology of SiO2 Related Materials, November 1993, Honolulu, USA
  14. (Invited) "In situ UPS measurements during GSMBE on Si(100) with Si2H6 and SiH2Cl2"
    Y. Takakuwa
    A Workshop on Two-Dimensional Semiconductor Research using Synchrotron Radiation: 2D(SR)2, November 1993, Tsukuba, Japan
  15. "Photoelectron intensity oscillation as a probe to monitor Si layer-by-layer growth"
    Y. Enta, N. Miyamoto, Y. Takakuwa and H. Kato
    3rd International Symposium on Atomic Layer Epitaxy and Related Surface Processes, May 1994, Sendai, Japan
  16. (Invited) "Two-dimensional growth and decomposition of initial thermal SiO2 layers on Si(100) surfaces"
    Y. Takakuwa
    The 6th Korea-Japan Joint Symposium on Surface Science & Solid State Chemistry, February 1995, Taejon, Korea
  17. (Invited) "In-situ UPS observations of epitaxial growth, etching and oxidation reactions on Si surfaces at high temperatures under a reactive gas atmosphere"
    Y. Takakuwa
    The 1995 Winter Meeting of the Korean Vacuum Society, February 1995, Suwan, Korea
  18. "Analyzing method of surface structures by X-ray photoelectron spectroscopy (XPS)"
    R. Kosugi, S. Fujita, Y. Takakuwa, J. Tani, N. Miyamoto and Y. Yamazaki
    The Second International Conference on Grain Growth in Polycrystalline Materials (ICGG-II), May 19, 1995, Kitakyushu-Yahata Royal Hotel, Kitakyushu, Japan.
  19. "An angle-resolved photoelectron spectroscopy study of the electronic structure of Si(001)2x2-Al and 2x2-In surfaces"
    H.W. Yeom, T. Abukawa, Y. Takakuwa, M. Nakamura, M. Kimura, T. Shimatani, Y. Mori, A. Kakizaki and S. Kono
    The 11th International Conference on Vacuum Ultraviolet Radiation Physics, Aug. 27 - Sep. 1, 1995, Rikkyo University, Tokyo, Japan
  20. "Multiple scattering study of synchrotron radiation photoelectron diffraction from Si(001)2x2-In surface"
    X. Chen, H.W. Yeom, T. Abukawa, Y. Takakuwa, T. Shimatani, Y. Mori, A. Kakizaki and S. Kono
    The 11th International Conference on Vacuum Ultraviolet Radiation Physics, Aug. 27 - Sept. 1, 1995, Rikkyo University, Tokyo, Japan
  21. "Band-dispersion-originated photoelectron intensity oscillations during Si epitaxial growth on Si(100)2X1 surface"
    Y. Enta, Y. Takegawa, D. Shoji, N. Miyamoto, Y. Takakuwa and H. Kato
    The 11th International Conference on Vacuum Ultraviolet Radiation Physics, Aug. 27 - Sept. 1, 1995, Rikkyo University, Tokyo, Japan
  22. "Kinetics of dissociative adsorption of dichlorosilane on Si(100)2x1"
    H. Sakamoto, Y. Takakuwa, T. Hori, T. Horie, M. Suemitsu and N. Miyamoto
    The 3rd International Conference on Atomically Controlled Surfaces and Interfaces, October 1995, USA
  23. "Methane adsorption and hydrogen desorption kinetics during diamond gas source molecular beam epitaxy"
    T. Nishimori, H. Sakamoto, Y. Takakuwa and S. Kono
    International Symposium on diamond devices, March 12, 1996, Osaka University, Osaka
  24. "Development of an apparatus for grazing-incidence back-scattering MEED "
    T. Abukawa, T. Shimatani, M. Kimura, Y. Takakuwa, N. Muramatsu, T. Hanano, T. Goto and S. Kono
    5th International Conference on the Structure of Surface, July 8 - 12, 1996, Aix en Provence, France
  25. "In (Al) adsorption on Si(001)2x1 studied by high-resolution photoelectron spectroscopy"
    H.W. Yeom, T. Abukawa, Y. Takakuwa, M. Nakamura, T. Shimatani, Y. Mori, M. Kimura, S. Fujimori, T. Okane, Y. Ogura, T. Miura, S. Sato, A. Kakizaki and S. Kono
    5th International Conference on the Structure of Surface, July 8 - 12, 1996, Aix en Provence, France
  26. "Photoelectron diffraction study of In adsorption on Si(001)2x1"
    H.W. Yeom, T. Abukawa, Y. Takakuwa, X. Chen, S. Fujimori, T. Okane, Y. Ogura, T. Miura, S. Sato, A. Kakizaki and S. Kono
    5th International Conference on the Structure of Surface, July 8 - 12, 1996, Aix en Provence, France
  27. "Effect of electron and atomic hydrogen irradiations on gas-source molecular beam epitaxy of diamond with pure methane"
    T. Nishimori, H. Sakamoto, Y. Takakuwa and S. Kono
    7th European Conference on Diamond, Diamond-like and Related Materials, September 10, 1996,Tours, France
  28. "Thermal oxidation of out-diffusing SiO with permeating O2 in a SiO2 film studied by angle-resolved X-ray photoelectron spectroscopy"
    Y. Takakuwa, M. Nihei and N. Miyamoto
    Second International Symposium on Control of Semiconductor Interfaces (ISCSI-2), Oct. 28 - Nov. 1, 1996, Karuizawa Prince Hotel, Karuizawa, Japan
  29. "Surface adsorbate related nucleation of crystallographic defect in chemical Vapor deposition of silicon with dichlorosilane"
    Y. Takakuwa, M. K. Mazumder and N. Miyamoto
    Second International Symposium on Control of Semiconductor Interfaces (ISCSI-2), Oct. 28 - Nov. 1, 1996, Karuizawa Prince Hotel, Karuizawa, Japan
  30. "In situ monitoring of gas source molecular beam epitaxy of silicon with disilane by ultraviolet photoelectron spectroscopy"
    H. Sakamoto, Y. Takakuwa, Y. Enta, T. Horie, T. Hori, T. Yamaguchi, N. Miyamoto and H. Kato
    Second International Symposium on Control of Semiconductor Interfaces (ISCSI-2), Oct. 28 - Nov. 1, 1996, Karuizawa Prince Hotel, Karuizawa, Japan
  31. "Chlorine desorption enhancement by rapid temperature elevating on a SiH2Cl2-adsorbed Si(001)2x1 surface"
    H. Sakamoto, Y. Takakuwa, T. Hori, T. Horie and N. Miyamoto
    International Symposium on Surface Nano-Control of Environmental Catalysts and Related Materials (6th Iketani Conference), November 1996, Waseda University, Tokyo, Japan
  32. "Photoelectron-spectroscopy and -diffraction study of the electronic and geometrical properties of In (Al) adsorption on Si(001)2x1"
    H.W. Yeom, T. Abukawa, X. Chen, Y. Takakuwa, M. Nakamura, Y. Mori, M. Kimura, A. Kakizaki and S. Kono
    European Research Conferences "Fundamental Aspects of Surface Science: Semiconductor Surfaces", June 1996, Blankenberge, Belgium
  33. "In situ observation of photon-stimulated hydrogen removal on a HF-passivated Si(111) surface by UPS using synchrotron radiation"
    Y. Takakuwa, M. Nogawa, H. Ishida, M. Niwano, H. Kato and N. Miyamoto
    1997 International Microprocesses and Nanotechnology Conference, July 7 - 10, 1997, Nagoya Congress Center, Nagoya, Japan
  34. "Observation of dimer dangling bonds on a Si(001) 2x1 surface by grazing-incidence reflection high energy electron diffraction and Auger electron spectroscopy "
    F. Shimoshikiryo, Y. Takakuwa and N. Miyamoto
    The Fourth International Symposium on Atomically Controlled Surfaces and Interfaces October 27 - 30, 1997, Waseda University, Tokyo, Japan
  35. "Influence of substrate orientation on the etching of silicon with chlorine: SiCl desorption on Si(001) and Si(111) surfaces"
    H. Sakamoto, Y. Takakuwa, T. Horie and N. Miyamoto
    The Fourth International Symposium on Atomically Controlled Surfaces and Interfaces October 27 - 30, 1997, Waseda University, Tokyo, Japan
  36. "Initial-stage carbonization of Si(001) surface with C2H4"
    R. Kosugi, S. Sumitani, T. Abukawa, Y. Takakuwa, S. Suzuki, S. Sato and S. Kono
    The Fourth International Symposium on Atomically Controlled Surfaces and Interfaces October 27 - 30, 1997, Waseda University, Tokyo, Japan
  37. "Effect of substrate inclination angle on SiO2 decomposition rate on Si(001) vicinal surfaces"
    T. Horie, Y. Takakuwa and N. Miyamoto
    International Symposium on Surface Nano-Control of Environmental Catalysts and Related Materials (6th Iketani Conference), November 1996, Waseda University, Tokyo, Japan
  38. (Invited) "In situ observation of thermal and photo-induced reactions on Si surfaces by ultraviolet photoelectron spectroscopy"
    Y. Takakuwa
    7th International Conference on Electron Spectroscopy, September 8 - 12, 1997, Chiba University, Chiba, Japan
  39. "RHEED-AES observation of In desorption on a single-domain Si(001)2X1 surface "
    K. ?S. Kim, Y. Takakuwa, T. Abukawa and S. Kono
    7th International Conference on Electron Spectroscopy, September 8 - 12, 1997, Chiba University, Chiba, Japan
  40. "Dimer structure of clean Si(001) surface studied by grazing-incidence back-scattered MEED"
    T. Abukawa, T. Shimatani, M. Kimura, Y. Takakuwa, N. Muramatsu, T. Hanano. T. Goto, W. R. A. Huff and S. Kono
    7th International Conference on Electron Spectroscopy, September 8 - 12, 1997, Chiba University, Chiba, Japan
  41. "Development of a three-electrodes-lens drift tube for time-of-flight mass spectrometry"
    H. Sakamoto, Y. Takakuwa, T. Hori, Y. Enta, N. Miyamoto and H. Kato
    The 6th International Conference on Synchrotron Radiation Instrumentation, August 4 - 8, 1997, Himeji, Japan
  42. (Invited) "In-Situ observation of desorption and diffusion Processes of In, Sb and Bi on high-temperature Si(001) surfaces by RHEED-AES"
    K.S. Kim, Y. Takakuwa, T. Abukawa, Y. Mori and S. Kono
    1997 Autumn Meeting of the Korean Physical Society, October 17 - 18, 1997, Soul, Korea
  43. "Structure and secondary electron emission of CVD diamond single-crystal surfaces"
    S. Kono, T. Goto, Y. Takakuwa, T. Abukawa, H. Yagi and T. Ito 2nd International Symposium on Diamond Electronics Devices (ISDED-2), March 9 - 10, 1998, Osaka University, Osaka, Japan
  44. (Invited) "n-type high-conductive diamond growth by gas source molecular beam epitaxy and its application"
    T. Nishimori, J. Utsumi, H. Sakamoto, Y. Takakuwa and S. Kono
    2nd International Symposium on Diamond Electronics Devices (ISDED-2), March 9 - 10, 1998, Osaka University, Osaka, Japan
  45. "In situ observation of high-temperature Si(001) surface during SiH2Cl2 exposure by photoelectron spectroscopy"
    T. Hori, H. Sakamoto, Y. Takakuwa, Y. Enta, H. Kato and N. Miyamoto
    14th International Vacuum Congress, Aug. 31 - Sept. 4, 1998, Birmingham, UK
  46. "Photoelectron diffraction study of Si(001)c(4x4)-C surface"
    R. Kosugi, T. Abukawa, M. Shimomura, S. Sumitani, H. W. Yeom, T. Hanano, K. Tono, S. Suzuki, S. Sato, T. Ota, S. Kono and Y. Takakuwa
    The 12th International Conference on Vacuum Ultraviolet Radiation Physics, August 3 - 7, 1998, San Francisco, USA
  47. (Invited) "Surface dynamics on high-temperature Si surfaces under high-pressure reactive gases studied by UPS"
    Y. Takakuwa
    The 12th International Conference on Vacuum Ultraviolet Radiation Physics, August 3 - 7, 1998, San Francisco, USA
  48. (Invited) "In situ observation of the surface electronic states during Si gas source molecular beam epitaxy"
    Y. Takakuwa
    The Second International Conference on Synchrotron Radiation in Material Science, Oct. 31 - Nov. 3, 1998, International Conference Center Kobe, Kobe, Japan
  49. (Invited) "In situ monitoring of semiconductor processes using synchrotron radiation "
    Y. Takakuwa
    1999 International Microprocesses and Nanotechnology Conference (MNC'99), July 6 - 8, 1999, Yokohama, Japan
  50. "Nucleation and growth kinetics of 3C-SiC on Si(001) during carbonization "
    R. Kosugi, M. Shimomura, T. Abukawa, Y. Fukuda, S. Kono and Y. Takakuwa
    International Joint Conference on Silicon Epitaxy and Heterostructures (IJC-Si), September 12 - 17, 1999, Miyagi Royal Hotel, Zao, Japan.
  51. "In situ observation of the diamond C(001) surface during H2 adsorption by time-resolved ultraviolet photoelectron spectroscopy"
    Y. Takakuwa, M. Asano, T. Yasuda, T. Hikita, R. Kosugi and S. Kono
    International Joint Conference on Silicon Epitaxy and Heterostructures (IJC-Si), September 12 - 17, 1999, Miyagi Royal Hotel, Zao, Japan.
  52. "Real-time monitoring of Si thermal oxidation by a combined method of RHEED and AES"
    F. Ishida, R. Kosugi, T. Abukawa and Y. Takakuwa
    International Joint Conference on Silicon Epitaxy and Heterostructures (IJC-Si), September 12 - 17, 1999, Miyagi Royal Hotel, Zao, Japan.
  53. "UHV m-electron beam evaluation of the CVD diamond particles grown on Si(001)"
    S. Kono, T. Goto, T. Abukawa, Y. Takakuwa, H. Yagi and T. Ito
    International Symposium on Surface Science for Micro- and Nano-Device Formation (ISSS-3), Nov. 29 - Dec. 1, 1999, Waseda University, Tokyo, Japan
  54. "Influence of surface step morphology on 3C-SiC nucleation and growth kinetics during carbonization of Si(001) vicinal surfaces with ethylene"
    R. Kosugi, M. Shimomura, T. Abukawa, T. Kanai, Y. Fukuda, S. Kono and Y. Takakuwa
    International Symposium on Surface Science for Micro- and Nano-Device Formation (ISSS-3), Nov. 29 - Dec. 1, 1999, Waseda University, Tokyo, Japan
  55. "STM study of the Si(001)c(4x4)-C surface as appeared at the initial stage carbonization of Si(001)"
    R. Kosugi, M. Shimomura, Y. Fukuda, S. Kono and Y. Takakuwa
    International Symposium on Surface Science for Micro- and Nano-Device Formation (ISSS-3), Nov. 29 - Dec. 1, 1999, Waseda University, Tokyo, Japan
  56. "Theory of hydrogen extraction from hydrogenated diamond surface"
    C. Kanai, K. Watanabe and Y. Takakuwa
    Third International Symposium on Control of Semiconductor Interfaces, October 25 - 29, 1999, Karuizawa Prince, Karuizawa, Japan
  57. (Invited) "Real-time monitoring of Si gas source molecular beam epitaxy by photoelectron spectroscopy using synchrotron radiation"
    Y. Takakuwa
    International Workshop on Surface and Interface, March 16 - 17, 200, Spring-8, Mikazuki-cho, Japan
  58. "Real-time monitoring of the growth and decomposition of SiO2 layers on Si(001) by a combined method of RHEED and AES"
    Y. Takakuwa and F. Ishida
    Eighth International Conference on Electron Spectroscopy & Structure (ICESS8), August 8 - 12, 2000, University of California Berkeley, San Francisco, USA
  59. "Nucleation mechanism of stacking fault during Si epitaxial growth by chemical vapor deposition with dichlorosilane"
    Y. Takakuwa, M.K. Mazumder and N. Miyamoto
    25th International Conference on the Physics of Semiconductor, September 17 - 22, 2000, Riga Royal Hotel, Osaka, Japan
  60. "Real-time monitoring of H2 adsorption on C(001) at high temperature by ultraviolet photoelectron spectroscopy"
    Y. Takakuwa and M. Asano
    47th American Vacuum Society Meeting, October 2 - 6, 2000, Hynes Convention Center, Boston, USA
  61. "Investigation of the early stage oxidation on α-titanium single crystal in a temperature range 100-500oC"
    Y. Mizuno, A. Tanaka, H. Tonda, Y. Takakuwa, J. Nakamura, Y. Yamauchi and T. Homma
    2001 Spring Meeting of the Electrochemical Society, March 2001, Washington D.C., USA
  62. "Time evolution of interface roughness during thermal oxidation on Si(001) "
    Y. Takakuwa and F. Ishida
    8th International Conference on the Formation of Semiconductor Interface, June 10 - 15, 2001, Hokkaido University, Sapporo, Japan
  63. "Oxygen Pressure dependence of the Initial Oxidation on Si(001) Surface Studied by AES combined with RHEED"
    Y. Takakuwa, F. Ishida and T. Kawawa
    2001 International Microprocesses and Nanotechnology Conference, Oct. 31 - Nov. 2, 2001, Kunibiki Messe, Matsue, Japan
  64. "Auger electron spectroscopy combined with reflection high energy electron diffraction applied to real-time monitoring of Si thermal oxidation"
    Y. Takakuwa, F. Ishida and T. Kawawa
    3rd International Symposium on Atomic Level Characterization fro New Materials and Devices ’01, Nov. 11 - 14, Nara-Ken New Public Hall, Nara, Japan
  65. "RHEED Intensity Oscillation during Thermal Oxidation on Si(001) Surface with O2"
    Y. Takakuwa and F. Ishida
    American Vacuum Society 48th International Symposium (AVS-48), Oct. 28 - Nov. 2, 2001, Moscone Center and Marriott Hotel, San Francisco, USA
  66. "Time-resolved photoelectron spectroscopy of oxidation on the Ti(0001) surface "
    Y. Takakuwa, S. Ishidzuka, A. Yoshigoe, Y. Teraoka, Y. Mizuno, H. Tonda and T. Homma
    European Materials Research Society Spring Meeting (E-MRS 2002), June 18 - 21, 2002, Strasbourg, France
  67. "Real-time monitoring photoelectron spectroscopy during oxidation on the Ti(0001) surface"
    S. Ishidzuka, Y. Takakuwa, A. Yoshigoe, Y. Teraoka, Y. Mizuno, H. Tonda and T. Homma
    7th International Conference on Nanometer-scale Science and Technology and 21st European Conference on Surface Science (NANO-7 & ECOSS-21), June 24 - 28, 2002, Malmo, Sweden
  68. "Phase transition from passive to active oxidation on the Si(001) surface studied by a real-time monitoring method of AES combined with RHEED"
    Y. Takakuwa and T. Kawawa
    7th International Conference on Nanometer-scale Science and Technology and 21st European Conference on Surface Science (NANO-7 & ECOSS-21), June 24 - 28, 2002, Malmo, Sweden
  69. "Real-time monitoring of oxidation on the Ti(0001) surface by synchrotron-radiation photoelectron spectroscopy and RHEED-AES"
    Y. Takakuwa, S. Ishidzuka, A. Yoshigoe, Y. Teraoka, Y. Yamauchi, Y. Mizuno, H. Tonda and T. Homma
    Fourth International Symposium on Control of Semiconductor Interfaces, October 21 - 25, 2002, Karuizawa, Japan
  70. "Phase transition from Langmuir-type adsorption to two-dimensional oxide island growth during oxidation on Si(001) surface"
    Y. Takakuwa, F. Ishida and T. Kawawa
    Fourth International Symposium on Control of Semiconductor Interfaces, October 21 - 25, 2002, Karuizawa, Japan
  71. "Emission of Si atoms during initial oxidation on Si(001) surface studied by real-time AES combined with RHEED"
    Y. Takakuwa and T. Kawawa
    Asia-Pacific Surface & Interface Analysis Conference (APSIAC’02), October 1 - 4, 2002, The University of Tokyo, Tokyo, Japan
  72. "Self-limiting oxidation during growth of very thin oxides on Si(001) surface studied by real-time Auger electron spectroscopy"
    Y. Takakuwa and T. Kawawa
    2002 International Microprocesses and Nanotechnology Conference, November 6 - 8, 2002, Tokyo Fashion Town, Tokyo, Japan
  73. "Real-time monitoring of oxygen uptake and chemical composition during oxidation on Ti(0001) surface"
    Y. Takakuwa, S. Ishidzuka, A. Yoshigoe, Y. Teraoka, K. Moritani, S. Ogawa, Y. Mizuno, H. Tonda and T. Homma
    7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, November 16 - 20, 2003, Nara-Ken New Public Hall, Nara, Japan
  74. "Rate-limiting reaction of growth and decomposition of very thin oxide on Si(001) surface"
    S. Ogawa and Y. Takakuwa
    2004 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology, May 26 - 28, 2004, National Museum of Emerging Science and Innovation, Tokyo, Japan
  75. "Emission of secondary electrons from diamond (001) surfaces heated at high temperatures under hydrogen radical irradiation"
    T. Yagi and Y. Takakuwa
    12th International Conference on Solid Films and Surfaces (ICSFS-12), June 21 - 25, 2004, Congress Center, Hamamatsu, Japan
  76. "Progress of stoichiometry of very thin oxides on Ti (0001) surfaces monitored by real-time photoelectron spectroscopy"
    S. Ogawa, Y. Takakuwa, S. Ishidzuka, A. Yoshigoe, Y. Teraoka, K. Moritani, S. Hachiue, Y. Mizuno, H. Tonda and T. Homma
    12th International Conference on Solid Films and Surfaces (ICSFS-12), June 21 - 25, 2004, Congress Center, Hamamatsu, Japan
  77. "Substrate orientation dependence of first- and second-oxide-layer growth kinetics: comparison between Si(001)2×1 and Si(111)7×7 surfaces"
    S. Ogawa and Y. Takakuwa
    2004 International Microprocess and nanotechnology Conference, October 26 - 29, 2004, Hotel Hankyu Expo Park, Osaka, Japan
  78. (Invited) "Real-time monitoring of chemical composition, surface structure and morphology, surface electronic state and work function during thermal oxidation on Si(001) surfaces"
    S. Ogawa and Y. Takakuwa
    Symposium on In-Situ Studies of Gas/Solid Surface Reaction Dynamics, Material Research Society Spring Meeting 2005, March 28 - April 1, 2005, Yerba Buena West, San Francisco, USA
  79. "Thermal stability and decomposition mechanism of very thin oxide on Ti(0001) surface studied by real-time photoelectron spectroscopy"
    Y. Takakuwa, S. Ogawa, M. Ohira, S. Ishidzuka, K. Moritani, A. Yoshigoe, Y. Teraoka, Y. Mizuno, H. Tonda and T. Homma
    Symposium on In-Situ Studies of Gas/Solid Surface Reaction Dynamics, Material Research Society Spring Meeting 2005, March 28 - April 1, 2005, Yerba Buena West, San Francisco, USA
  80. "Consumption kinetics of Si atoms during growth and decomposition of very thin oxide on Si(001) surfaces"
    S. Ogawa, A. Yoshigoe, S. Ishidzuka, Y. Teraoka and Y. Takakuwa
    The fourth International Conference on Si Epitaxy and Heterostructures (ICSI-4), May 23 - 26, 2005, The Westin Awaji Island, Hyogo, Japan
  81. "Initial growth kinetics of oxide on Si(111) studied by real-time Auger electron spectroscopy"
    S. Ogawa and Y. Takakuwa
    The 23rd European Conference on Surface Science (ECOSS-23), September 4 - 9, 2005, The Freie Universitat Berlin, Berlin, Germany
  82. (Invited) "Characterization of diamond electron emitter using combined XPS/UPS/FES system"
    K. Okano, H. Yamaguchi, I. Saito, T. Yamada, M. Kudo, and Y. Takakuwa
    JEOL User’s Meeting, September 16, 2005, Tokyo, Japan
  83. "Comparative study of the initial oxidation kinetics on Si(001)2×1 and Ti(0001)1×1 surfaces by real-time ultraviolet photoelectron spectroscopy"
    Y. Takakuwa, S. Ogawa, M. Ohira and Y. Mizuno
    American Vacuum Society 52nd International Symposium, October 30 - November 4, 2005, Hynes Convention Center, Boston, USA
  84. "Growth and subsequent decomposition kinetics of very thin oxide on Si(001) surface studied by real-time RHEED combined with AES"
    S. Ogawa and Y. Takakuwa
    American Vacuum Society 52nd International Symposium, October 30 - November 4, 2005, Hynes Convention Center, Boston, USA
  85. "Electron emission mechanism of diamond characterized by combined XPS/UPS/FES "
    H. Yamaguchi, T. Yamada, M. Kudo, B.B. Pate, Y. Takakuwa and K. Okano
    2005 MRS Fall Meeting, Poster EE7.7, November 28 - December 2, 2005, Boston, U.S.A.
  86. "Thermal oxidation kinetics of a Si1-xCx alloy layer on a Si(001) surface monitored in real time by RHEED combined with AES"
    Y. Takakuwa, T. Kawamura and S. Ogawa
    European Materials Research Society 2006 Spring Meeting, May 29 - June 2, 2006, Acropolis Congress Center, Nies, France
  87. "Growth and decomposition kinetics of very thin oxide on Si(001) surfaces studied by RHEED combined with AES"
    S. Ogawa and Y. Takakuwa
    JSPS-KOSEF Asian Core Program: 1st Japan-Korea Symposium on Surface Nanostructures, June 28 - 29, 2006, Hotel Sansa-Tei, Zao-cho, Japan
  88. "Electron Emission mechanism of diamond characterized by combined XPS/UPS/FES "
    H. Yamaguchi, T. Yamada, M. Kudo, B.B. Pate, Y. Takakuwa, and K. Okano
    19th International Vacuum Nanoelectronics Conference &50th International Field Emission Symposium, July 17 - 21, 2006, Guilin, China
  89. (Invited) "Electron emission mechanism of diamond"
    K. Okano, H. Yamaguchi, I. saito, T. masuzawa, Y. Kudo, T. Yamada, M. Kudo, and Y. Takakuwa
    19th International Vacuum Nanoelectronics Conference &50th International Field Emission Symposium, July 17 - 21, 2006, Guilin, China
  90. "Simultaneous observation of oxygen uptake curves and electronic states during room-temperature oxidation on Si(001) surfaces by real-time ultraviolet photoelectron spectroscopy"
    S. Ogawa and Y. Takakuwa
    24th European conference on surface science (ECOSS24), September 4 - 8, 2006, Universite Paris V, Paris, France
  91. "Oxidation reaction kinetics on a Ti(0001) surface studied by real-time monitoring methods of UPS and RHEED combined with AES"
    Y. Takakuwa, M. Ohira, S. Ogawa, Y. Mizuno, Y. Yamauchi and T. Homma
    24th European conference on surface science (ECOSS24), September 4 - 8, 2006, Universite Paris V, Paris, France
  92. "Rate-limiting reaction of layer-by-layer oxidation on Si(001) surfaces: dependence on the first oxide layer growth kinetics"
    S. Ogawa and Y. Takakuwa
    2006 International Conference on Solid State Devices and Materials (SSDM2006), September 13 - 15, Pacifico Yokohama, Yokohama, Japan
  93. (Invited) "Unified Si oxidation reaction model mediated by the point defect generation at SiO2/Si interface"
    Y. Takakuwa
    2006 International Workshop on Dielectric Thin Films for Future ULSI Devices ?Science and Technology- (IWDTF06), November 8 - 10, 2006, Kawasaki City Industrial Promotion Hall, Kawasaki, Japan
  94. "Layer-by-layer oxidation on Si(001) surface studied by real-time photoelectron spectroscopy using synchrotron radiation"
    S. Ogawa, A. Yoshigoe, S. Ishidzuka, Y. Teraoka and Y. Takakuwa
    2006 International Workshop on Dielectric Thin Films for Future ULSI Devices ?Science and Technology- (IWDTF06), November 8 - 10, 2006, Kawasaki City Industrial Promotion Hall, Kawasaki, Japan
  95. (Invited) "Electron emission mechanism of doped CVD diamond characterized by combined XPS/UPS/FES"
    H. Yamaguchi, I. Saito, Y. Kudo, T. Masuzawa, T. Yamada, M. Kudo, Y. Takakuwa, and K. Okano
    Naval Research Laboratory Seminar, November 30, 2006, Washington D.C., USA
  96. "Electron emission mechanism of doped CVD diamond characterized by combined XPS/UPS/FES"
    H. Yamaguchi, T. Yamada, M. Kudo, Y. Takakuwa, and K. Okano
    2006 MRS Fall Meeting, November 27 - December 1, 2006, Boston, USA
  97. (Invited) "Electron emission mechanism of doped CVD diamond characterized by combined XPS/UPS/FES"
    H. Yamaguchi, T. Yamada, M. Kudo, Y. Takakuwa, and K. Okano
    The 67th Meeting of JSPS 158th Committee on Vacuum Micro-Electronics, April 27, 2007, Tokyo, Japan
  98. "Oxidation reaction kinetics on Ti(0001) surface studied by real-time monitoring methods of XPS, UPS, and RHEED combined with AES"
    Y. Takakuwa, S. Ogawa, M. Ohira, S. Ishidzuka, A. Yoshigoe, Y. Teraoka, Y. Mizuno, Y. Yamauchi, and T. Homma
    The 3rd international Workshop on Oxidation Reactions, May 10, 2007, Osaka University, Osaka
  99. "Real-time photoelectron spectroscopy study on the oxidation-induced strained Si atom at SiO2/Si(001) interface: dependence on oxidation temperature"
    S. Ogawa, A. Yoshigoe, S. Ishidzuka, Y. Teraoka and Y. Takakuwa
    The 17th International Vacuum Congress (IVC-17), the 13th International Conference on Surface Science (ICSS-13) and International Conference on Nanoscience and Nanotechnology (ICN+T2007), July 2 - 6, 2007, Stockholm International Fairs, Stockholm, Sweden
  100. "Real-time ultraviolet photoelectron spectroscopy study on the oxidation reaction kinetics of an Si1-xCx ally layer (x≃0.1) grown on p-type Si(001) surface with ethylene"
    Y. Takakuwa and S. Ogawa
    The 17th International Vacuum Congress (IVC-17), the 13th International Conference on Surface Science (ICSS-13) and International Conference on Nanoscience and Nanotechnology (ICN+T2007), July 2 - 6, 2007, Stockholm International Fairs, Stockholm, Sweden
  101. "Combined XPS/UPS/FES for characterization of electron emission mechanism from diamond"
    H. Yamaguchi, Y. Kudo, T. Masuzawa, M. Kudo, T. Yamada, Y. Takakuwa, and K. Okano
    The 20th International Vacuum Nanoelectronics Conference, O-9, July 8 - 12, 2007, Chicago, USA
  102. "Real-time monitoring of stained Si atoms at SiO2/Si(001) interface during layer-by-layer oxide growth by Si 2p photoelectron spectroscopy using synchrotron radiation"
    Y. Takakuwa, S. Ogawa, A. Yoshigoe, S. Ishidzuka and Y. Teraoka
    The 15th International Conference on Vacuum Ultraviolet Radiation Physics (VUV XV), July 29 - August 3, 2007, Konzerthaus am Gendarmenmarkt, Berlin, Germany
  103. "Real-Time Observation of the Oxidation Reaction Kinetics of a Si1-xCx Alloy Layer Grown on Si(001) with C2H4 by UPS and RHEED Combined with AES"
    Y. Takakuwa, S. Ogawa, T. Kawamura
    The 6th International Symposium on Atomic Level Characterizations for New Materials and Devices ’07 (ALC’07), October 28 - November 2, 2007, Kanazawa Art Hall, Kanazawa, Japan
  104. "Influence of Rapid O2 Pressure Increase on the Oxide Growth Kinetics at SiO2/Si(001) Interface Studied by Real-Time X-ray Photoelectron Spectroscopy "
    S. Ogawa, A. Yoshigoe, S. Ishidzuka, Y. Teraoka and Y. Takakuwa
    The 6th International Symposium on Atomic Level Characterizations for New Materials and Devices ’07 (ALC’07), October 28 ? November 2, 2007, Kanazawa Art Hall, Kanazawa, Japan
  105. "Temperature Dependence of the Oxidation-Induced Strain at SiO2/Si(001) Interface Studied by XPS Using Synchrotron Radiation"
    S. Ogawa, A. Yoshigoe, S. Ishidzuka, Y. Teraoka and Y. Takakuwa
    The 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-9), PS2-66, November 11 - 15, 2007, Tokyo University, Tokyo, Japan
  106. "The origin of field-induced electron emission from N-doped CVD diamond characterized by combined XPS/UPS/FES"
    H. Yamaguchi, Y. Kudo, T. Masuzawa, M. Kudo, T. Yamada, Y. Takakuwa, and K. Okano
    2007 MRS Fall Meeting, P15.11, Novemver 26 - 30, 2007, Boston, USA
  107. (Invited) "Electron emission mechanism of diamond characterized by combined XPS/UPS/FES "
    K. Okano, H. Yamaguchi, Y. Kudo, T. Masuzawa, M. Kudo, T. Yamada, and Y. Takakuwa
    IEEE International Nanoelectronics Conference, March 24 - 27, 2008, Shanghai, China
  108. "Photoemission-assisted plasma chemical vapor deposition synthesis of nano-graphene on mica and silicon"
    T. Takami, E. Ikenaga, M. Nihei, and Y. Takakuwa
    American Vacuum Society 55th International Symposium & Exhibition, GR-TuP4, October 19 ? 24, Hynes Convention Center, Boston, USA
  109. "Multi-layer graphene grown by photoemission-controlled plasma CVD"
    S. Ogawa, T. Takami, H. Sumi, A. Saikubo, E. Ikenaga, M. Nihei, and Y. Takakuwa
    The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), November 9- 13, 2008, International Conference Center, Waseda University, Tokyo, Japan
  110. (Invited)"Multi-layer graphene for interconnect applications"
    M. Nihei, M. Sato, D. kondo, S. Sato, Y. Takakuwa, E. Ikenaga, and Y. Awano
    The 5th International Symposium on Surface Science and Nanotechnology (ISSS-5), November 9- 13, 2008, International Conference Center, Waseda University, Tokyo, Japan
  111. "Electron backscattering diffraction pattern measurements of grain-size of multi-layer graphene grown by low temperature CVD for future LSI graphene interconnects"
    M. Sato, M. Nihei, D. Kondo, S. Sato, Y. Takakuwa, E. Ikenaga, M. Ohfuji, and Y. Awano
    2008 Material Reseach Society Fall Meeting, December 1 - 5, Hynes Convention Center, Boston, USA
  112. (Invited) "Thermal oxidation kinetics on Si(001) surface studied by RHEED combined with AES"
    S. Ogawa and Y. Takakuwa"
    International Workshop “Diffraction studies for in situ epitaxial systems and surface structures”, February 23, 2009, IMRAM, Tohoku University, Sendai Japan
  113. (Invited) "Multi-layer graphene grown by low temperature CVD for advanced carbon-based interconnects"
    M. Nihei, M. Sato, D. Kondo, S. Sato, S. Ogawa, Y. Takakuwa, E. Ikenaga, and Y. Awano
    2009 Material Research Society Spring Meeting, April 13-17, 2009, Moscone West / San Francisco Marriott, San Francisco, USA
  114. "Remaining problems in the combined XPS/UPS/FES System"
    H. Yamaguchi, S. Nozue, R. Muraoka, Y. Kudo, T. Masuzawa, T. Yamada, M. Kudo, Y. Takakuwa, W. J. Chun and K. Okano
    22nd International Vacuum Nanoelectronics Conference (IVNC2009), July 20-24, 2009, Congress Center, Hamamatsu, Japan
  115. "Generation mechanism of photoemission-assisted plasma on SiO2(350 nm)/Si substrate"
    T. Kaga, S. Ogawa, H. Hozumi, H. Sumi, M. Sato, M. Nihei and Y. Takakuwa
    2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 7-9, 2009, Sendai Kokusai Hotel, Sendai, Japan
  116. "Effect of carrier gas (Ar and He) on the crystallographic quality of multi-layer graphene grown on Si by photoemission-assisted plasma CVD"
    H. Sumi, S. Ogawa, A. Saikubo, E. Ikenaga, M. Nihei and Y. Takakuwa
    2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 7-9, 2009, Sendai Kokusai Hotel, Sendai, Japan
  117. "Raman spectroscopy, TEM and bulk-sensitive XPS study of multi-layer graphene grown on SiO2(350 nm)/Si"
    S. Ogawa, H. Sumi, A. Saikubo, E. Ikenaga, M. Sato, M. Nihei and Y. Takakuwa
    2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 7-9, 2009, Sendai Kokusai Hotel, Sendai, Japan
  118. "Enhancement of carbon diffusion caused by thermal oxidation on Si1-xCx alloy layer / Si(001) surfaces"
    H. Hozumi, S. Ogawa and Y. Takakuwa
    2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 7-9, 2009, Sendai Kokusai Hotel, Sendai, Japan
  119. "Strained Si atom at SiO2/Si interface during oxidation of Si1-xCx alloy layer on Si(001) substrate"
    H. Hozumi, S. Ogawa, A. Yoshigoe, S. Ishidzuka, J.R. Harris, Y. Teraoka, and Y. Takakuwa
    International Workshop on Electron Spectroscopy for Gas-phase Molecules and Solid Surfaces (IWES2009), October 12-15, 2009, Hotel Taikanso, Matsushima, Japan
  120. (Invited) "Electrical properties of CVD-grown multi-layer graphene for carbon-based interconnects"
    M. Nihei, M. Sato, D. Kondo, S. Sato, S. Ogawa, E. Ikenaga, and Y. Takakuwa
    22nd International Microprocesses and Nanotechnology Conference (MNC2009), November 16-19, 2009, Sheraton Sapporo Hotel, Sapporo, Japan
  121. "Real-time photoelectron spectroscopy study of 3C-SiC nucleation and growth on Si(001) surfaces by carbonization with ethylene"
    H. Hozumi, , S. Ogawa, A. Yoshigoe, S. Ishidzuka, J. Harris, Y. Teraoka, and Y. Takakuwa
    7th International Symposium on Atomic Level Characterization for New Materials and Devices ’09, December 6-11, 2009, The Westin Maui Resort & Spa, Maui, Hawaii, USA
  122. "Characterization of crystal structure and chemical bond configuration of multilayer graphene grown on SiO2 substrate"
    S. Ogawa, H. Sumi, A. Saikubo, E. Ikenaga, M. Sato, M. Nihei, and Y. Takakuwa
    7th International Symposium on Atomic Level Characterization for New Materials and Devices ’09, December 6-11, 2009, The Westin Maui Resort & Spa, Maui, Hawaii, USA
  123. "Carbon condensation and 3C-SiC growth caused by oxidizing Si1-xCx alloy layers on Si(001) substrate"
    H. Hozumi, S. Ogawa, A. Yoshigoe, S. Ishidzuka, J.R. Harris, Y. Teraoka, and Y. Takakuwa
    5th International workshop on new group IV semiconductor nanoelectronics, January 28 - 30, 2010, Laboratory for Nanoelectronics and Spintronics , Research Institute of Electrical Communication , Tohoku University, Sendai, Japan
  124. "Ar-diluted CH4 concentration dependence of the crystallinity of multilayer graphene grown by photoemission-assisted plasma-enhanced CVD"
    H. Sumi, S. Ogawa, M. Sato, M. Nihei, and Y. Takakuwa
    2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, March 7-10, 2010, Meijyo University, Nagoya, Japan
  125. "CVD growth of networked nanographite on SiO2/Si substrates: dependence on photoemission-assisted plasma discharge conditions"
    T. Kaga, S. Ogawa, Y. Ohtomo, H. Sumi, M. Sato, M. Nihei, and Y. Takakuwa
    The 37th International Conference on Compound Semicnductors, May 31 - June 4, 2010, Takamatsu Symbol Tower, Kagawa, Japan
  126. "Thickness dependence of crystallinity of networked nanographite grown by photoemission-assisted plasma-enhanced CVD on Si and SiO2/Si substrates"
    S. Ogawa, H. Sumi, M. Sato, M. Nihei, and Y. Takakuwa
    The 37th International Conference on Compound Semiconductors, May 31 - June 4, 2010, Takamatsu Symbol Tower, Kagawa, Japan
  127. "Networked-nanographite wire grown on SiO2 dielectric without catalysts using metal-photoemission-assisted plasma-enhanced CVD"
    M. Sato, S. Ogawa, T. Kaga, H. Sumi, E. Ikenaga, Y. Takakuwa, M. Nihei, and N Yokoyama
    2010 IEEE International Interconnect Technology Conference, June 6-9, 2010, Hyatt Regency Hotel at San Francisco Airport, San Francisco, California, USA
  128. "Real-time photoelectron spectroscopy of graphene oxide upon thermal reduction"
    H. Yamaguchi, T. Kaga, H. Hozumi, G. Eda, C. Mattevi, S. Ogawa, T. Yamada, Y. Takakuwa, and M. Chhowalla
    European Material Research Society: 2010 Spring Meeting (E-MRS 2010), June 7- 11, 2010, Congress Center, Strasbourg, France
  129. "Plasma Discharge Condition Dependence of the Crystallographic Quality of Networked Nanographite Grown by the Photoemission-Assisted Plasma-Enhanced CVD"
    S. Ogawa, T. Kaga, Y. Ohtomo, M. Sato, M. Nihei, and Y. Takakuwa
    2010 International Conference on Solid State Devices and Materials (SSDM 2010), September 22-23, 2010, The University of Tokyo, Tokyo, Japan
  130. "Effect of annealing on electrical properties of networked-nanographite wire grown by metal-photoemission-assisted plasma-enhanced CVD"
    M. Sato, S. Ogawa, T. Kaga, E. Ikenaga, Y. Takakuwa, M. Nihei, and N. Yokoyama
    2010 International Conference on Solid State Devices and Materials (SSDM 2010), September 22-23, 2010, The University of Tokyo, Tokyo, Japan
  131. "Temperature dependence of exclusive SiO2 formation during thermal oxidation of Si1-xGex alloy layer on Si(001) surfaces"
    H. Hozumi, S. Ogawa, A. Yoshigoe, S. Ishidzuka, J.R. Harries, Y. Teraoka, and Y. Takakuwa
    2010 International Conference on Solid State Devices and Materials (SSDM 2010), September 22-23, 2010, The University of Tokyo, Tokyo, Japan
  132. "Oxidation kinetics of SiGe alloy layer studied by real-time XPS"
    H. Hozumi, S. Ogawa, A. Yoshigoe, S. Ishidzuka, J.R. Harries, Y. Teraoka and Y. Takakuwa
    The 5th International Symposium on Practical Surface Analysis and 7th Korea-Japan Symposium on Surface Analysis, October 3 - 6, 2010, Hyundae Hotel in Gyeongyu, Gyeongyu, Korea