東北大学多元研　高桑研究室 本文へジャンプ
PUBLICATION LISTs

  1. "Photoemission measurements of EuB6"
    Y. Takakuwa, S. Suzuki and T. Sagawa
    Japanese Journal of Applied Physics, 17, 284-287 (1978).
  2. "Photoemission study on the surface components of the 4f levels in Yb metal"
    Y. Takakuwa, S. Takahashi, S. Suzuki, S. Kono, T. Yokotsuka, T. Takahashi and T. Sagawa
    Journal of the Physical Society of Japan, 51, 2045-2046 (1982).
  3. "Surface 4f level shift in Yb metal studied by ARUPS, hydrogen and oxygen exposures and work function measurements"
    Y. Takakuwa, S. Suzuki, T. Yokotsuka and T. Sagawa
    Journal of the Physical Society of Japan, 53, 687-695 (1984).
  4. "XPS study of rare earth dodecaborides: TmB12, YbB12 and LuB12"
    F. Iga, Y. Takakuwa, T. Takahashi, M. Kasaya, T. Kasuya and T. Sagawa
    Solid State Communications, 50, 903-905 (1984).
  5. "Photoemission study of quasi-two dimensional metal; Ag2F"
    F.-J. Sun, T. Takahashi, Y. Takakuwa, H. Yaegashi and T. Sagawa
    Journal of the Physical Society of Japan, 55, 461-464 (1986).
  6. "Photoemission spectroscopy of LnBa2Cu3O7-δ (Ln = Y and Sm)"
    T. Takahashi, F. Maeda, H. Arai, H. Katayama-Yoshida, Y. Okabe, T. Suzuki, Y. Takakuwa, S. Hosoya, A. Fujimori, T. Miyahara, T. Koide, T. Shidara, M. Sato, S. Shamoto and M. Onoda
    Physica B: Condensed Matter, 148, 476-479 (1987).
  7. "Low-temperature cleaning of HF-passivated Si(111) surface with VUV light"
    Y. Takakuwa, M. Nogawa, M. Niwano, H. Katakura, S. Matsuyoshi, H. Ishida, H. Kato and N. Miyamoto
    Japanese Journal of Applied Physics, 28, L1274-L1277 (1989).
  8. "Photon-stimulated desorption of H+ ions from oxidized Si(111) surfaces"
    Y. Takakuwa, M. Niwano, M. Nogawa, H. Katakura, S. Matsuyoshi, H. Ishida, H. Kato and N. Miyamoto
    Japanese Journal of Applied Physics, 28, 2581-2586 (1989).
  9. "Synchrotron-radiation-stimulated desorption of O+ ions from an oxidized silicon surface "
    M. Niwano, H. Katakura, Y. Takakuwa, N. Miyamoto, A. Hiraiwa and K. Yagi
    Applied Physics Letters, 56, 1125-1127 (1990).
  10. "Growth kinetics in silane gas-source molecular beam epitaxy"
    M. Suemitsu, F. Hirose, Y. Takakuwa and N. Miyamoto
    Journal of Crystal Growth, 105, 203-208 (1990).
  11. "Synchrotron-radiation-induced decomposition of thin native oxide films on Si(100) "
    M. Niwano, H. Katakura, Y. Takakuwa and N. Miyamoto
    Journal of Applied Physics, 68, 5576-5583 (1990).
  12. "Removal of the sulfur passivation overlayer on a (NH4)2Sx-treated GaAs surface by vacuum-ultraviolet irradiation "
    Y. Takakuwa, M. Niwano, S. Fujita, Y. Takeda and N. Miyamoto
    Applied Physics Letters, 58, 1635-1637 (1991).
  13. "Photon-stimulated desorption study of a SiO2 film surface"
    M. Niwano, Y. Takakuwa, H. Katakura and N. Miyamoto
    Journal of Vacuum Science & Technology, A, 9, 212-216 (1991).
  14. "Photoemission study of the SiO2/Si interface structure of thin oxide films on Si(100), (111), and (110) surfaces "
    M. Niwano, H. Katakura, Y. Takeda, Y. Takakuwa, N. Miyamoto, A. Hiraiwa and K. Yagi
    Journal of Vacuum Science & Technology, A, 9, 195-200 (1991).
  15. "Formation of a thin SiO2 film using synchrotron radiation excited reaction "
    T. Ogawa, I. Ochiai, K. Mochiji, A. Hiraiwa, Y. Takakuwa, M. Niwano and N. Miyamoto
    Applied Physics Letters, 59, 794-796 (1991).
  16. "Photoemission study of the SiO2/Si interface structure of thin oxide film on vicinal Si(100) surface "
    M. Niwano, H. Katakura, Y. Takeda, Y. Takakuwa, N. Miyamoto and M. Maki
    Journal of Vacuum Science & Technology, A, 10, 339-343 (1992).
  17. "Kinetics of photon-stimulated desorption of positive ions from a HF-treated Si surface "
    M. Niwano, Y. Takeda, Y. Takakuwa and N. Miyamoto
    Surface Science, 261, 349-358 (1992).
  18. "Atmospheric photoexcited chemical vapor deposition of Si using ultraviolet-light-irradiated H2 carrier gas and nonexcited SiH2Cl2"
    M. K. Mazumder, Y. Takakuwa and N. Miyamoto
    Applied Physics Letters, 61, 2881-2883 (1992).
  19. "Outdiffusion and subsequent desorption of volatile SiO molecules during annealing of thick SiO2 films in vacuum"
    Y. Takakuwa, M. Nihei and N. Miyamoto
    Japanese Journal of Applied Physics, 32, L480-L483 (1993).
  20. "Photon-stimulated desorption from chemically treated Si surfaces"
    I. Ochiai, T. Ogawa, Y. Takakuwa and K. Mochiji
    Surface Science, 287/288, 175-177 (1993).
  21. "Gold wire sealing method of stainless-steel/aluminum-alloy joint for thermal isolation at liquid-nitrogen temperature "
    F. Shimoshikiryo, Y. Takakuwa, N. Oyama and N. Miyamoto
    Journal of Vacuum Science & Technology, A, 11, 2874-2875 (1993).
  22. "First-order isothermal desorption kinetics of chlorine on SiH2Cl2-adsorbed Si(100) surface"
    H. Sakamoto, Y. Takakuwa, T. Hori, T. Horie and N. Miyamoto
    Applied Surface Science, 75, 27-32 (1994).
  23. "Si dangling bonds on Si(100) surface during gas-source molecular beam epitaxy with Si2H6"
    Y. Takakuwa, T. Yamaguchi and N. Miyamoto
    Journal of Crystal Growth, 136, 328-332 (1994).
  24. "Hydrogen desorption rate and surface hydrogen coverage during isothermal annealing for Si2H6-adsorbed Si(100) surfaces "
    T. Horie, Y. Takakuwa, T. Yamaguchi and N. Miyamoto
    Journal of Crystal growth, 136, 344-348 (1994).
  25. "Photoelectron intensity oscillation during chemical vapor deposition on Si(100) surface with Si2H6 "
    Y. Takakuwa, Y. Enta, T. Yamaguchi, T. Hori, M. Niwano, N. Miyamoto, H. Ishida, H. Sakamoto, T. Nishimori and H. Kato
    Applied Physics Letters, 64, 2013-2015 (1994).
  26. "Origin of surface-state photoemission intensity oscillation during Si epitaxial growth on Si(100) surface "
    Y. Enta, T. Horie, N. Miyamoto, Y. Takakuwa, H. Sakamoto and H. Kato
    Surface Science, 313, L797-L800 (1994).
  27. "Thermal oxidation mechanism based on formation and diffusion of volatile SiO molecules "
    Y. Takakuwa, M. Nihei, T. Horie and N. Miyamoto
    Journal of Non-Crystalline Solids, 179, 345-353 (1994).
  28. "Two-dimensional growth and decomposition of initial thermal SiO2 layer on Si(100) "
    T. Horie, Y. Takakuwa and N. Miyamoto
    Japanese Journal of Applied Physics, 33, 4684-4690 (1994).
  29. "Growth defect observation with pyramidal hillock and reduction by photoexcited hydrogen in Si CVD with SiH2Cl2 "
    Y. Takakuwa, M. K. Mazumder and N. Miyamoto
    Journal of the Electrochemical Society, 141, 2567-2572 (1994).
  30. "Surface electronic structure of single-domain Si(001)2x2-Al: an angle-resolved photoelectron spectroscopy study using synchrotron radiation"
    H. W. Yeom, T. Abukawa, Y. Takakuwa, M. Nakamura, M. Kimura, A. Kakizaki and S. Kono
    Surface Science, 321, L177-L182 (1994).
  31. "Photoelectron intensity oscillation as a probe to monitor Si layer-by-layer growth "
    Y. Enta, N. Miyamoto, Y. Takakuwa and H. Kato
    Applied Surface Science, 82/83, 327-331 (1994).
  32. "Initial stage growth and electronic structure of Al overlayer on a single-domain Si(100)2x1 surface"
    H. W. Yeom, T. Abukawa, Y. Takakuwa, M. Nakamura, M. Kimura, A. Kakizaki, S. Suzuki, S. Sato and S. Kono
    Journal of The Surface Science Society of Japan, 16, 441-447 (1995).
  33. "Diamond epitaxial growth by gas-source molecular beam epitaxy with pure methane "
    T. Nishimori, H. Sakamoto, Y. Takakuwa and S. Kono
    Japanese Journal of Applied Physics, 34, L1297-L1300 (1995).
  34. "Variation of size and density of pyramidal hillock during epitaxial growth of silicon using dichlorosilane gas "
    M. K. Mazumder, Y. Mashiko, H. Koyama, Y. Takakuwa and N. Miyamoto
    Journal of the Electrochemical Society, 142, 3956-3961 (1995).
  35. "Methane adsorption and hydrogen isothermal desorption kinetics on a C(100)-(1x1) surface "
    T. Nishimori, H. Sakamoto, Y. Takakuwa and S. Kono
    Journal of Vacuum Science & Technology, A, 13, 2781-2786 (1995).
  36. "Generation kinetics of pyramidal hillock and crystallographic defect on Si(111) vicinal surfaces grown with SiH2Cl2"
    M. K. Mazumder, Y. Mashiko, H. Koyama, Y. Takakuwa and N. Miyamoto
    Journal of Crystal Growth, 155, 183-192 (1995).
  37. "An angle-resolved photoelectron spectroscopy study of the electronic structures of Si(001)2x2-Al and -In surfaces "
    H. W. Yeom, T. Abukawa, Y. Takakuwa, M. Nakamura, M. Kimura, T. Shimatani, Y. Mori, A. Kakizaki and S. Kono
    Journal of Electron Spectroscopy and Related Phenomena, 80, 177-180 (1996).
  38. "Multiple scattering study of synchrotron radiation photoelectron diffraction from Si(001)2x2-In surface "
    X. Chen, H. W. Yeom, T. Abukawa, Y. Takakuwa, T. Shimatani, Y. Mori, A. Kakizaki and S. Kono
    Journal of Electron Spectroscopy and Related Phenomena, 80, 147-150 (1996).
  39. "Band-dispersion-originated photoelectron intensity oscillation during Si epitaxial growth on Si(100) "
    Y. Enta, Y. Takegawa, D. Shoji, M. Suemitsu, Y. Takakuwa, H. Kato and N. Miyamoto
    Journal of Electron Spectroscopy and Related Phenomena, 80, 173-176 (1996).
  40. "Kinetics of dissociative adsorption of dichlorosilane on Si(100)2x1 "
    H. Sakamoto, Y. Takakuwa, T. Hori, T. Horie, M. Suemitsu and N. Miyamoto
    Applied Surface Science, 107, 68-74 (1996).
  41. "Surface electronic structure of Si(001)2x2-In studied by angle-resolved photoelectron spectroscopy "
    H. W. Yeom, T. Abukawa, Y. Takakuwa, Y. Mori, T. Shimatani, A. Kakizaki and S. Kono
    Physical Review, B, 53, 1948-1957 (1996).
  42. "In situ observation of the surface reaction during synchrotron-radiation assisted gas source molecular beam epitaxy of silicon "
    Y. Takakuwa, Y. Enta and N. Miyamoto
    Optoelectronics -Devices and Technologies-, 11, 3-22 (1996)
  43. "Initial stage growth and interface formation of Al on Si(001)2x1"
    H. W. Yeom, T. Abukawa, Y. Takakuwa, M. Nakamura, M. Kimura, A. Kakizaki and S. Kono
    Surface Science, 365, 328-336 (1996).
  44. "Methane adsorption and hydrogen desorption kinetics during diamond gas source molecular beam epitaxy "
    T. Nishimori, H. Sakamoto, Y. Takakuwa and S. Kono
    Diamond Films and Technology, 6, 301-310 (1996).
  45. "Surface core levels of In adsorption on Si(001)2x1 "
    H. W. Yeom, T. Abukawa, Y. Takakuwa, Y. Mori, T. Shimatani, A. Kakizaki and S. Kono
    Physical Review, B, 54, 4456-4459 (1996).
  46. "Analyzing method of surface structures by X-ray photoelectron spectroscopy (XPS) "
    R. Kosugi, S. Fujita, Y. Takakuwa, J. Tani, N. Miyamoto and Y. Yamazaki
    Materials Science Forum, 204-206, 755-760 (1996).
  47. "Reflection high energy electron diffraction-Auger electron spectroscopy (RHEED-AES) observation of Bi desorption on a single-domain Si(001)2x1 surface "
    K.S. Kim, Y. Takakuwa, Y. Mori and S. Kono
    Japanese Journal of Applied Physics, 35, L1695-L1698 (1996).
  48. "Effects of electron and atomic hydrogen irradiation on gas source molecular beam epitaxy of diamond with pure methane "
    T. Nishimori, H. Sakamoto, Y. Takakuwa and S. Kono
    Diamond and Related Materials, 6, 463-467 (1997).
  49. "In situ monitoring of gas source molecular beam epitaxy of silicon with disilane by ultraviolet photoelectron spectroscopy "
    H. Sakamoto, Y. Takakuwa, Y. Enta, T. Horie, T. Hori, T. Yamaguchi, N. Miyamoto and H. Kato
    Applied Surface Science, 117/118, 77-81 (1997).
  50. "Thermal oxidation of outdiffusing SiO with permeating O2 in a SiO2 film studied by angle-resolved X-ray photoelectron spectroscopy "
    Y. Takakuwa, M. Nihei and N. Miyamoto
    Applied Surface Science, 117/118, 141-146 (1997).
  51. "Surface adsorbate related nucleation of crystallographic defect in chemical vapor deposition of silicon with dichlorosilane "
    Y. Takakuwa, M. K. Mazumder and N. Miyamoto
    Applied Surface Science, 117/118, 88-93 (1997).
  52. "Electronic structures of the Si(001)2x3-In surface "
    H. W. Yeom, T. Abukawa, Y. Takakuwa, Y. Mori, T. Shimatani, A. Kakizaki and S. Kono
    Physical Review, B, 55, 15669-15674 (1997).
  53. "n-type high-conductive epitaxial diamond film by gas source molecular beam epitaxy with methane and tri-n-butylphosphine "
    T. Nishimori, K. Nakano, H. Sakamoto, Y. Takakuwa and S. Kono
    Applied Physics Letters, 71, 945-947 (1997).
  54. "RHEED-AES observation of Sb desorption on a single-domain Si(001)2x1 surface "
    K. S. Kim, Y. Takakuwa, T. Abukawa and S. Kono
    Journal of The Surface Science Society of Japan, 18, 501-505 (1997).
  55. "In situ observation of photon-stimulated hydrogen removal on a HF-passivated Si(111) surface by ultraviolet photoelectron spectroscopy using synchrotron radiation "
    Y. Takakuwa, M. Nogawa, H. Ishida, M. Niwano, H. Kato and N. Miyamoto
    Japanese Journal of Applied Physics, 36, 7699-7705 (1997).
  56. "Anisotropy of spin-orbit branching ratio in angle-resolved photoemission from adsorbate layers"
    H. W. Yeom, T. Abukawa, Y. Takakuwa, S. Fujimori, T. Okane, Y. Ogura, T. Miura, S. Sato, A. Kakizaki and S. Kono
    Surface Science, 395, L236-L241 (1998).
  57. "RHEED-AES observation of Sb surface segregation during Sb-mediated Si MBE on Si(001) "
    K.S. Kim, Y. Takakuwa, T. Abukawa and S. Kono
    Journal of Crystal Growth, 186, 95-103 (1998).
  58. "Development of a three-electrodes-lens drift tube for time-of-flight mass spectrometry "
    H. Sakamoto, Y. Takakuwa, T. Hori, Y. Enta, H. Kato and N. Miyamoto
    Journal of Synchrotron Radiation, 6 (1999), 612-614.
  59. "Observation of dimer dangling bonds on a Si(001)2x1 surface by grazing-incidence reflection high energy electron diffraction and Auger electron spectroscopy "
    F. Shimoshikiryo, Y. Takakuwa and N. Miyamoto
    Applied Surface Science, 130-132, 123-127 (1998).
  60. "In situ observation of thermal and photon-induced reactions on Si surfaces by ultraviolet photoelectron spectroscopy "
    Y. Takakuwa, T. Yamaguchi, T. Hori, T. Horie, Y. Enta, H. Sakamoto, H. Kato and N. Miyamoto
    Journal of Electron Spectroscopy and Related Phenomena, 88-91, 747-756 (1998).
  61. "X-ray photoelectron diffraction study of Si(001)c(4x4)-C surface "
    R. Kosugi, S. Sumitani, T. Abukawa, Y. Takakuwa, S. Suzuki, S. Sato and S. Kono
    Surface Science, 412/413, 125-131 (1998).
  62. "RHEED-AES observation of In desorption on a single-domain Si(001)2x1 surface "
    K.S. Kim, Y. Takakuwa, T. Abukawa and S. Kono
    Surface Science, 410, 99-105 (1998).
  63. "Growth of n-type diamond with high conductivity by gas-source molecular beam epitaxy and its application "
    T. Nishimori, J. Utsumi, H. Sakamoto, Y. Takakuwa and S. Kono
    Diamond Films and Technology, 8, 323-330 (1998).
  64. "Dimer structure of clean Si(001) surface studied by grazing-incidence back-scattering MEED "
    T. Abukawa, T. Shimatani, M. Kimura, Y. Takakuwa, N. Muramatsu, T. Hanano. T. Goto, W. R. A. Huff and S. Kono
    Journal of Electron Spectroscopy and Related Phenomena    , 88-91, 533-538 (1998).
  65. Reply to "Comment on 'X-ray photoelectron diffraction study of Si(001)c(4x4)-C surface' by Kosugi et al." [Surf. Sci. 412/413 (1998) 125]
    R. Kosugi, Y. Takakuwa and S. Kono
    Surface Science, 436, 271-272 (1999).
  66. "In situ observation of a high-temperature Si(001) surface during SiH2Cl2 exposure by photoelectron spectroscopy "
    T. Hori, H. Sakamoto, Y. Takakuwa, Y. Enta, H. Kato and N. Miyamoto
    Thin Solid Films, 343-344, 354-360 (1999).
  67. "Photoelectron diffraction study of Si(001)c(4x4)-C surface"
    R. Kosugi, T. Abukawa, M. Shimomura, S. Sumitani, H. W. Yeom, T. Hanano, K. Tono, S. Suzuki, S. Sato, T. Ohta, S. Kono and Y. Takakuwa
    Journal of Electron Spectroscopy and Related Phenomena, 101-103, 239-243 (1999).
  68. "Surface dynamics on a high-temperature Si surface under a high-pressure reactive gas atmosphere studied by time-resolved UPS"
    Y. Takakuwa
    Journal of Electron Spectroscopy and Related Phenomena, 101-103, 211-221 (1999).
  69. "Real-time monitoring of Si carbonization process by a combined method of reflection high-energy electron diffraction and Auger electron spectroscopy"
    R. Kosugi, Y. Takakuwa, K.S. Kim, T. Abukawa and S. Kono
    Applied Physics Letters, 74, 3939-3941 (1999).
  70. "Crystallinity evaluation of phosphorus-doped n-type diamond thin film"
    M. Shimomura, T. Nishimori, T. Abukawa, Y. Takakuwa, H. Sakamoto and S. Kono
    Journal of Applied Physics, 85, 3931-3933 (1999).
  71. "Ab initio study of hydrogen desorption from diamond C(100) surfaces"
    C. Kanai, K. Watanabe and Y. Takakuwa
    Japanese Journal of Applied Physics, 38, L783-L785 (1999).
  72. "Theory of hydrogen extraction from hydrogenated diamond surfaces"
    C. Kanai, K. Watanabe and Y. Takakuwa
    Applied Surface Science, 159-160, 599-602 (2000).
  73. "The surface characterization of the early stages of the oxidation of titanium"
    Y. Mizuno, A. Tanaka, Y. Takakuwa, F. Ishida, K. Takahiro, H. Tonda, K. Ishikawa, T. Takano, T. Ikeuchi, T. Okuda, S. Yamaguchi and T. Homma
    Materials at High Temperatures, 17, 13-21 (2000).
  74. "UHV μ?electron beam evaluation of the CVD diamond particles grown on Si(001) "
    S. Kono, T. Goto, T. Abukawa, Y. Takakuwa, K. Sato, H. Yagi and T. Ito
    Diamond and Related Materials, 10, 48-58 (2001).
  75. "Real-time monitoring of the growth and decomposition of SiO2 layers on Si(001) by combined method of RHEED and AES"
    Y. Takakuwa and F. Ishida
    Journal of Electron Spectroscopy and Related Phenomena, 114-116, 401-407 (2001).
  76. "Real-time monitoring of Si thermal oxidation by Auger electron spectroscopy combined with reflection high-energy electron diffraction"
    Y. Takakuwa and F. Ishida
    Journal of The Surface Science Society of Japan, 22, 483-491 (2001) (in Japanese).
  77. "Ab initio calculations on etching of graphite and diamond surfaces by atomic hydrogen"
    C. Kanai, K. Watanabe and Y. Takakuwa
    Physical Review, B, 63, 235311-1-235311-6 (2001).
  78. "Ab initio study on surface segregation of hydrogen from diamond C(100) surfaces"
    C. Kanai, Y. Shichibu, K. Watanabe and Y. Takakuwa
    Physical Review, B, 65, 153312-1-153312-4 (2002).
  79. "Time evolution of interface roughness during thermal oxidation on Si(001)"
    Y. Takakuwa, F. Ishida and T. Kawawa
    Applied Surface Science, 190, 20-25 (2002).
  80. "Temperature dependence of oxide decomposition on titanium surfaces in ultrahigh vacuum"
    Y. Mizuno, F.K. King, Y. Yamauchi, T. Homma, A. Tanaka, Y. Takakuwa and T. Momose
    Journal of Vacuum Science & Technology, A, 20, 1716-1721 (2002).
  81. "Dependence of thin film media microstructure and recording properties on composition of very thin Cr-based seedlayer"
    S. Yoshimura, D.D. Djayaprawira, M. Mikami, Y. Takakuwa and M. Takahashi
    IEEE Transactions on Magnetics, 38, 1958-1960 (2002).
  82. "Time-resolved photoelectron spectroscopy of oxidation on the Ti(0001) surface"
    Y. Takakuwa, S. Ishidzuka, A. Yoshigoe, Y. Teraoka, Y. Mizuno, H. Tonda and T. Homma
    Nuclear Instruments & Methods, B, 200, 376-381 (2003).
  83. "Ab initio study on the electronic states of hydrogen defects in diamond subsurface"
    C. Kanai, K. Watanabe and Y. Takakuwa
    Japanese Journal of Applied Physics, 42, 3510-3513 (2003).
  84. "Phase transition from Langmuir-type adsorption to two-dimensional oxide island growth during oxidation on Si(001) surface"
    Y. Takakuwa, F. Ishida and T. Kawawa
    Applied Surface Science, 216, 133-140 (2003).
  85. "Real-time monitoring of oxidation on the Ti(0001) surface by synchrotron radiation photoelectron spectroscopy and RHEED-AES"
    Y. Takakuwa, S. Ishida, A. Yoshigoe, Y. Teraoka, Y. Yamauchi, Y. Mizuno, H. Tonda and T. Homma
    Applied Surface Science, 216, 395-401 (2003).
  86. "Effect of naturally adsorbed gas on substrate surface on the growth of very thin WCr seedlayer"
    S. Yoshimura, D. D. Djayaprawira, Y. Takakuwa, M. Takahashi
    IEEE Transactions on Magnetics, 39 (2003), 2270-2272.
  87. "Effect of very thin Cr-based seedlayer material with different affinity for oxygen on thin film media microstructure and recording properties"
    S. Yoshimura, D. D. Djayaprawira, Y. Takakuwa, M. Takahashi
    Journal of Applied Physics, 93, 8465-8467 (2003).
  88. "In-situ observation of oxidation on the Ti(0001) surface by real-time photoelectron spectroscopy using synchrotron radiation"
    Y. Takakuwa, S. Ishidzuka, A. Yoshigoe, Y. Teraoka, Y. Mizuno, H. Tonda and T. Homma
    Journal of The Surface Science Society of Japan, 24, 500-508 (2003) (in Japanese).
  89. "Comparison of the initial oxidation kinetics between Si(001) and Si(111) surfaces"
    S. Ogawa and Y. Takakuwa
    The Journal of the Vacuum Society of Japan, 47, 235-238 (2004) (in Japanese).
  90. "Oxidation State during Growth of Very Thin Oxide on Ti(0001) Surface"
    Y. Takakuwa, S. Ishidzuka, A. Yoshigoe, Y. Teraoka, K. Moritani, S. Ogawa, Y. Mizuno, H. Tonda and T. Homma
    The Journal of the Vacuum Society of Japan, 47, 457-461 (2004) (in Japanese).
  91. "Temperature dependence of oxidation-induced changes of work function on Si(001)2×1 surface studied by real-time ultraviolet photoelectron spectroscopy"
    S. Ogawa and Y. Takakuwa
    Japanese Journal of Applied Physics, 44, L1048-L1051 (2005).
  92. "Consumption kinetics of Si atoms during growth and decomposition of very thin oxide on Si(001) surfaces"
    S. Ogawa, A. Yoshigoe, S. Ishidzuka, Y. Teraoka and Y. Takakuwa
    Thin Solid Films, 508, 169-174 (2006).
  93. "Electron emission mechanism of diamond characterized using combined XPS/UPS/FES system"
    H. Yamaguchi, T. Yamada, M. Kudo, Y. Takakuwa, and K. Okano
    Applied Physics Letters, 88, 202101-1-202101-3 (2006).
  94. "Oxidation-Induced Changes of Work function and Interfacial Electronic States on Si(001) surfaces Studied by Real-Time Ultraviolet Photoelectron Spectroscopy"
    S. Ogawa and Y. Takakuwa
    The Journal of the Vacuum Society of Japan, 49, 327-330 (2006) (in Japanese).
  95. "Rate-limiting reactions of growth and decomposition of very thin oxides on Si(001) surfaces studied by reflection high energy electron diffraction combined with Auger electron diffraction"
    S. Ogawa and Y. Takakuwa
    Japanese Journal of Applied Physics, 45, 7063-7079 (2006).
  96. "Thermal oxidation kinetics of an Si1-xCx alloy layer (x?0.1) on Si(001) surfaces monitored in real time by RHEED combined with AES"
    S. Ogawa, T. Kawawa and Y. Takakuwa
    Materials Science and Engineering, B, 135, 210-214 (2006).
  97. "Real-time photoelectron spectroscopy for nitridation at Ti(0001) surface using supersonic N2 molecular beams"
    S. Ogawa, Y. Takakuwa, S. Ishidzuka, A. Yoshigoe, Y. Teraoka, and Y. Mizuno
    The Journal of the Vacuum Society of Japan, 49, 775-779 (2006) (in Japanese).
  98. "Translational kinetic energy induced oxidation on Ti(0001) surfaces using a supersonic O2 beam"
    S. Ogawa, Y. Takakuwa, S, Ishidzuka, A. Yoshigoe, Y. Teraoka, K. Moritani, and Y. Mizuno
    IEEJ Transactions, EIS, 127, 140-145 (2007) (in Japanese).
  99. "Si(001) surface layer-by-layer oxidation studied by real-time photoelectron spectroscopy using synchrotron radiation"
    S. Ogawa, A. Yoshigoe, S. Ishidzuka, Y. Teraoka, and Y. Takakuwa
    Japanese Journal of Applied Physics, 46, 3244-3254 (2007).
  100. "Simultaneous observation of oxygen uptake curves and electronic states during room-temperature oxidation on Si(001) surfaces by real-time ultraviolet photoelectron spectroscopy"
    S. Ogawa and Y. Takakuwa
    Surface Science, 601, 3838-3842 (2007).
  101. "Electron emission mechanism of hydrogenated natural type IIb diamond (111)"
    H. Yamaguchi, I. Saito, Y. Kudo, T. Masuzawa, T. Yamada, M. Kudo, Y. Takakuwa, and K. Okano
    Diamond & Related Materials, 17, 162-166 (2008).
  102. "Combined x-ray photoelectron spectroscopy/ultraviolet photoelectron spectroscopy/field emission spectroscopy for characterization of electron-emission mechanism of diamond"
    H. Yamaguchi, Y. Kudo, T. Masuzawa, M. Kudo, T. Yamada, Y. Takakuwa, and K. Okano
    Journal of the Vacuum Science & Technology, B, 26, 730-734 (2008).
  103. "Characterization of CVD grown multi-layer graphene by microscopic Raman spectroscopy and bulk-sensitive XPS"
    H. Sumi, S. Ogawa, T. Takami, A. Saikubo, E. Ikenaga, M. Nihei, and Y. Takakuwa
    Journal of The Surface Science Society of Japan, 30, 403-409 (2009) (in Japanese).
  104. "Electron emission from conduction band of diamond with negative electron affinity"
    H. Yamaguchi, T. Masuzawa, S. Nozue, Y. Kudo, I. Saito, J. Koe, M. Kudo, T. Yamada, Y. Takakuwa, and K. Okano
    Physical Review, B, 80, 165321-1-165321-5 (2009).
  105. "Behavior of emitted Si atoms for the initial stage of oxidation on Si(100)-(2×1) surface observed by scanning tunneling microscope"
    K. Watanabe, M. Ikeda, H. Shimizu, S. Ogawa, and Y. Takakuwa
    Journal of The Surface Science Society of Japan, 30, 694-701 (2009) (in Japanese).
  106. "Catalyst-free growth of networked nanographite on Si and SiO2 substrates by photoemission-assisted plasma-enhanced chemical vapor deposition"
    T. Takami, S. Ogawa, H. Sumi, T. Kaga, A. Saikubo, E. Ikenaga, M. Sato, M. Nihei, and Y. Takakuwa
    e-Journal of Surface Science and Nanotechnology, 7, 882-890 (2009).
  107. "Effect of carrier gas (Ar and He) on the crystallographic quality of networked nanographite grown on Si substrates by photoemission-assisted plasma-enhanced chemical vapor deposition"
    H. Sumi, S. Ogawa, M. Sato, A. Saikubo, E. Ikenaga, M. Nihei, and Y. Takakuwa
    Japanese Journal of Applied Physics, 49, (2010) in press.