研究業績（1993年）

オリジナル論文

• Y. Takakuwa, M. Nihei, and N. Miyamoto
  Outdiffusion and subsequent desorption of volatile SiO molecules during annealing of thick SiO₂ films in vacuum
  Japanese Journal of Applied Physics, 32, (1993), L480-L483.
  
• I. Ochiai, T. Ogawa, Y. Takakuwa, and K. Mochiji
  Photon-stimulated desorption from chemically treated Si surfaces
  Surface Science, 287/288, (1993), 175-177.
  
• F. Shimoshikiryo, Y. Takakuwa, N. Oyama, and N. Miyamoto
  Gold wire sealing method of stainless-steel/aluminum-alloy joint for thermal isolation at liquid-nitrogen temperature
  Journal of Vacuum Science & Technology, A11, (1993), 2874-2875.
  

国際会議抄録

• Y. Takakuwa, M.K. Mazumder, and N. Miyamoto
  Growth defect observation with pyramidal hillock and reduction by photoexcited hydrogen
  Proceedings of 183rd Meeting of The Electrochemical Society, co-sponsored by The Electrochemical Society of Japan with the cooperation of The Japan Society of Applied Physics, May 1993, Honolulu, USA.
• H. Sakamoto, Y. Takakuwa, Y. Enta, T. Hori, N. Miyamoto, and H. Kato
  Surface reaction kinetics in synchrotron radiation assisted chemical vapor deposition of Si with SiH₂Cl₂
  Proceedings of the 12^th International Symposium on Chemical Vapor Deposition 1993, edited by K.F. Jensen and G.W. Cullen, (May 1993, Honolulu, USA) 27-33.

国内会議抄録

研究報告書など

学会発表

国内学会

• 高桑雄二
  放射光励起半導体プロセスと表面計測
  平成5年度東北大学科学計測研究所春季研究発表会, 東北大学, 仙台 (1993.6).
  
• 高桑雄二
  シリコン酸化プロセスの統合反応モデルの実験的検証
  化学工学会CVD特別研究会ミニシンポジウム「表面反応はどこまで理解できるか」, 東京大学, 東京 (1993.11).
  

• 堀仁一，高桑雄二，遠田義晴，坂本仁志，宮本信雄
  放射光励起オージェ電子分光法によるSi表面光反応の解析
  第22回放射工学研究会, 東北大学, 仙台 (1993.2).
  
• 坂本仁志，高桑雄二，遠田義晴，堀仁一，加藤博雄，宮本信雄
  SiH₂Cl₂吸着Si(100)表面での熱脱離反応
  第40回応用物理学関係連合講演会, 東京 (1993.3).
  
• 坂本仁志，高桑雄二，遠田義晴，堀仁一，加藤博雄，宮本信雄
  SiH₂Cl₂吸着Si(100)表面からの水素・塩素の光刺激脱離
  第40回応用物理学関係連合講演会, 東京 (1993.3).
  
• 高桑雄二，堀仁一，遠田義晴，坂本仁志，加藤博雄，宮本信雄
  放射光励起オージェ電子分光法によるSi₂H₆、 SiH₂Cl₂吸着Si(100)表面の解析
  第6回日本放射光学会, 東京大学, 東京 (1993.5).
  
• 遠田義晴，飯田仁，高桑雄二，加藤博雄，宮本信雄
  SR-UPSによる(NH₄)₂S_x処理GaAs表面の硫黄脱理離と表面状態変化：脱離方法依存
  第6回日本放射光学会, 東京大学, 東京 (1993.5).
  
• 坂本仁志，高桑雄二，堀江哲弘，堀仁一，宮本信雄
  Si(100)表面からの塩素熱脱離によるエッチングの表面反応モデル
  第54回応用物理学会学術講演会, 札幌 (1993.9).
  

国際会議

• Y. Takakuwa
  In situ UPS measurements during GSMBE on Si(100) with Si₂H₆ and SiH₂Cl₂
  A Workshop on Two-Dimensional Semiconductor Research using Synchrotron Radiation: 2D(SR)², Tsukuba, Japan (1993.11).
  

• Y. Takakuwa, M.K. Mazumder, and N. Miyamoto
  . Growth defect observation with pyramidal hillock and reduction by photoexcited hydrogen
  183rd Meeting of The Electrochemical Society, co-sponsored by The Electrochemical Society of Japan with the cooperation of The Japan Society of Applied Physics, Honolulu, USA (1993.5).
  
• H. Sakamoto, Y. Takakuwa, Y. Enta, T. Hori, N. Miyamoto, and H. Kato
  Surface reaction kinetics in synchrotron radiation assisted chemical vapor deposition of Si with SiH₂Cl₂
  183rd Meeting of The Electrochemical Society, co-sponsored by The Electrochemical Society of Japan with the cooperation of The Japan Society of Applied Physics, Honolulu, USA (1993.5).
  
• H. Sakamoto, Y. Takakuwa, T. Hori, T. Horie, and N. Miyamoto
  First-order isothermal desorption kinetics of chlorine on SiH₂Cl₂-adsorbed Si(100) surface
  The Second International Symposium on Atomically Controlled Surfaces and Interfaces, Joensuu, Finland (1993.6).
  
• Y. Takakuwa, T. Yamaguchi, and N. Miyamoto
  Si dangling bonds on Si(100) surface during gas-source molecular beam epitaxy with Si₂H₆
  4th International Conference on Chemical Beam Epitaxy and Related Growth Techniques, Nara, Japan (1993.7).
  
• T. Horie, Y. Takakuwa, T. Yamaguchi, and N. Miyamoto
  Hydrogen desorption rate and surface hydrogen coverage during isothermal annealing for Si₂H₆-adsorbed Si(100) surfaces
  4th International Conference on Chemical Beam Epitaxy and Related Growth Techniques, Nara, Japan (1993.7).
  
• T. Horie, Y. Takakuwa, and N. Miyamoto
  Two-dimensional growth and decomposition of initial thermal SiO₂ layer on Si(100)
  1993 International Conference on Solid State Devices and Materials, Makuhari, Japan (1993.8).
  
• Y. Takakuwa, M. Nihei, T. Horie, and N. Miyamoto
  . Thermal oxidation mechanism based on formation and diffusion of volatile SiO molecules
  R.A. Weeks International Symposium on Science and Technology of SiO₂ Related Materials, Honolulu, USA (1993.11).